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Freescale Semiconductor Technical Data
Document Number: MD7P19130H Rev. 0, 5/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 20 dB Drain Efficiency -- 30% Device Output Signal PAR -- 6 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 36 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power * Pout @ 1 dB Compression Point w 130 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MD7P19130HR3 MD7P19130HSR3
1930 - 1990 MHz, 40 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465M - 01, STYLE 1 NI - 780 - 4 MD7P19130HR3
CASE 465H - 02, STYLE 1 NI - 780S - 4 MD7P19130HSR3
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MD7P19130HR3 MD7P19130HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 130 W CW Case Temperature 75C, 40 W CW Symbol RJC Value (1,2) 0.31 0.36 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(3)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (3) Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) Dynamic Characteristics (3,4) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
VGS(th) VGS(Q) VDS(on)
1.2 1.9 0.1
2 2.7 0.2
2.7 3.4 0.3
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.2 586 348
-- -- --
pF pF pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.5 27 5.6 -- -- 20 30 6 - 36 - 16 21.5 -- -- - 32.5 -7 dB % dB dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Measurement made with device in single - ended configuration. 4. Part internally matched both on input and output. (continued)
MD7P19130HR3 MD7P19130HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW Gain Flatness in 60 MHz Bandwidth @ Pout = 40 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 130 W CW Average Group Delay @ Pout = 130 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 130 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB GF Delay G P1dB Min -- -- -- -- -- -- -- Typ 130 0.3 0.5 2.3 80 0.016 0.01 Max -- -- -- -- -- -- -- Unit W dB ns dB/C dBm/C Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, 1930 - 1990 MHz Bandwidth
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 3
B1 VBIAS + C1 + C2 C3 C4 R1 C6 Z14 Z11 Z7 RF INPUT Z8 Z9 Z10 Z12 Z19 Z1 Z2 Z3 C5 Z4 Z5 Z6 DUT C9 Z20 Z21 Z22 Z23 Z13 Z15 Z16 Z17 Z18 C7 + C8 + C10 C11
VSUPPLY C12
Z24
Z25
Z26
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14
0.582 x 0.110 Microstrip 0.140 x 0.284 Microstrip 0.066 x 0.080 Microstrip 0.127 x 0.080 Microstrip 0.042 x 0.237 Microstrip 0.095 x 0.375 Microstrip 0.330 x 0.320 Microstrip 0.438 x 0.530 Microstrip 0.311 x 0.741 Microstrip 0.025 x 0.814 Microstrip 0.049 x 0.254 Microstrip 0.078 x 0.814 Microstrip 0.134 x 0.957 Microstrip 0.150 x 0.276 Microstrip
Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 PCB
0.203 x 0.957 Microstrip 0.271 x 0.930 Microstrip 0.010 x 0.540 Microstrip 0.042 x 0.205 Microstrip 0.471 x 0.080 Microstrip 0.024 x 0.241 Microstrip 0.057 x 0.349 Microstrip 0.781 x 0.311 Microstrip 0.271 x 0.080 Microstrip 0.024 x 0.095 Microstrip 0.134 x 0.190 Microstrip 0.511 x 0.080 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C12 C5, C9 C6 C7 C8 C10 C11 R1 Description Short Ferrite Bead 47 F, 50 V Electrolytic Capacitor 100 F, 50 V Electrolitic Capacitor 1.0 F Chip Capacitor 0.1 F Chip Capacitors 11 pF Chip Capacitors 13 pF Chip Capacitor 8.2 pF Chip Capacitor 22 F, 35 V Tantalum Capacitor 470 F, 63 V Electrolytic Capacitor 10 F, 50 V Chip Capacitor 10 , 1/4 W Chip Resistor Part Number 2743019447 ROP50 476KXM063M T491C105K050AT ATC100B102JT50XT CDR33BX104AKYS ATC100B110JT500XT ATC100B130JT500XT ATC100B8R2JT500XT T491C226K035AT 477KXM063M GRM55DR61H106KA88B CRCW120610R0FKEA Manufacturer Fair - Rite Illinois Cap. Kemet ATC Kemet ATC ATC ATC Kemet Illinois Cap. Murata Vishay
MD7P19130HR3 MD7P19130HSR3 4 RF Device Data Freescale Semiconductor
C2
C10
C3 C4
R1 B1
C6
C7 C12 C11
C1 C8
C5 CUT OUT AREA
C9
MD7P19130H/HS Rev. 2
Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 4. Possible Circuit Topologies
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 22.5 22 21.5 Gps, POWER GAIN (dB) 21 20.5 20 19.5 19 18.5 ACPR 18 17.5 1880 PARC 1900 1920 1940 1960 1980 IRL 2000 2020 Gps VDD = 28 Vdc, Pout = 40 W (Avg.) IDQ = 1250 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) D 38 35 32 29 26 -28 -30 ACPR (dBc) -32 -34 -36 -38 2040 -4 -8 -12 -16 -20 -24 IRL, INPUT RETURN LOSS (dB) 0 -0.5 -1 -1.5 -2 -2.5 PARC (dB)
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 40 Watts Avg.
21.5
IDQ = 1875 mA
20.5 Gps, POWER GAIN (dB)
1562.5 mA 1250 mA
19.5
18.5
937.5 mA
17.5 625 mA 16.5 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc, f = 1960 MHz CW Measurements
Figure 6. CW Power Gain versus Output Power
20.5 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 1 Gps -1 dB = 33.42 W -2 dB = 49.63 W D, DRAIN EFFICIENCY (%) 0 -1 -2 ACPR -3 -4 -5 20 D -3 dB = 69.20 W 30 25 20 110 120 45 40 35 -25 -30 -35 -40 -45 -50 ACPR (dBc) -20
50
VDD = 28 Vdc, IDQ = 1250 mA PARC f = 1960 MHz, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 30 40 50 60 70 80 90 100
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MD7P19130HR3 MD7P19130HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
23 21 Gps, POWER GAIN (dB) 19 TC = -40C 25C 85C D 30 -40C 25C 85C 10 0 200 20 Gps -40C 25C 85C 40 50 D, DRAIN EFFICIENCY (%) -10 -20 -30 -40 -50 -60 ACPR (dBc) 190 210 60 0
17 VDD = 28 Vdc, IDQ = 1250 mA, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal 15 PAR = 7.5 dB @ 0.01% Probability (CCDF) 13 ACPR 11 1 10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 S21 (dB) 12 S11 8 4 0 1550 VDD = 28 Vdc IDQ = 1250 mA 1650 1750 1850 1950 2050 2150 2250 -20 -25 -30 2350 106 90 110 130 150 170 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and D = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. S21 0 -5 -10 -15 S11 (dB) 108 109
MTTF (HOURS)
107
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
Figure 10. MTTF versus Junction Temperature
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 7
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 11. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 12. Single - Carrier W - CDMA Spectrum
MD7P19130HR3 MD7P19130HSR3 8 RF Device Data Freescale Semiconductor
Zo = 10
Zsource f = 2040 MHz f = 1880 MHz
f = 2040 MHz
Zload f = 1880 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 7.37 + j1.00 7.33 + j0.96 7.27 + j0.93 7.19 + j0.90 7.07 + j0.89 6.93 + j0.97 6.89 + j1.04 6.83 + j1.07 6.75 + j1.12 Zload W 1.84 - j3.56 1.78 - j3.37 1.72 - j3.17 1.64 - j2.98 1.55 - j2.79 1.48 - j2.55 1.46 - j2.36 1.44 - j2.20 1.40 - j2.02
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 24 25
P3dB = 53.48 dBm (223 W) P1dB = 52.67 dBm (185 W)
Ideal
Pout, OUTPUT POWER (dBm)
Actual
VDD = 28 Vdc, IDQ = 1250 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 1960 MHz 26 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 7.15 - j1.86 Zload 0.84 - j2.99
Figure 14. Pulsed CW Output Power versus Input Power @ 28 V
MD7P19130HR3 MD7P19130HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 11
MD7P19130HR3 MD7P19130HSR3 12 RF Device Data Freescale Semiconductor
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 13
MD7P19130HR3 MD7P19130HSR3 14 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date May 2008 * Initial Release of Data Sheet Description
MD7P19130HR3 MD7P19130HSR3 RF Device Data Freescale Semiconductor 15
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MD7P19130HR3 MD7P19130HSR3
Rev. 16 0, 5/2008 Document Number: MD7P19130H
RF Device Data Freescale Semiconductor

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